SMMUN2233LT1G - ON Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoSMMUN2233LT1G
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ManufacturerON Semiconductor
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ChipWorker Part#CW12169133
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CategoryBJT Transistor, BJT
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PackageSOT-23-3
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DescriptionSOT-23 NPN 50V 100mA
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DocumentationDatasheet
Payment Methods and Delivery
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SMMUN2233LT1G Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | SMMUN2233LT1G |
| Manufacturer | ON Semiconductor |
| ChipWorker Part# | CW12169133 |
| Category | BJT Transistor, BJT |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Polarity | NPN |
| Power Dissipation | 0.4 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 80 @5mA, 10V |
| Input Power (Max) | 246 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 400 mW |
| expand all | |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
| HK STC License | NLR |
Product Description
- Apply the applications of a traditional bi polar junction transistor, in digital circuits with this NPN SMMUN2233LT1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Delivery
Chipworker Certification
Ordering Information
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