SMUN5211DW1T1G - ON Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoSMUN5211DW1T1G
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ManufacturerON Semiconductor
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ChipWorker Part#CW19848457
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CategoryBJT Transistor, BJT
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PackageSOT-363
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DescriptionSC-88 NPN 50V 100mA
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DocumentationDatasheet
Payment Methods and Delivery
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SMUN5211DW1T1G Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | SMUN5211DW1T1G |
| Manufacturer | ON Semiconductor |
| ChipWorker Part# | CW19848457 |
| Category | BJT Transistor, BJT |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-363 |
| Halogen Free Status | Halogen Free |
| Polarity | NPN |
| Power Dissipation | 0.385 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 35 @5mA, 10V |
| Input Power (Max) | 187 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 385 mW |
| expand all | |
| Operating Temperature | -55℃ ~ 150℃ |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- The NPN SMUN5211DW1T1G digital transistor from ON Semiconductor is your alternative to traditional BJTs in that it can provide digital signal processing power. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Delivery
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Ordering Information
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