SMUN5311DW1T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SMUN5311DW1T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW13767626
Category

BJT Transistor, BJT
Package

SC-70-6
Description

SC-88 NPN+PNP 50V 100mA
Documentation

Datasheet

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SMUN5311DW1T1G Specifications

Attribute	Attribute Value

Part Number	SMUN5311DW1T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW13767626
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Halogen Free Status	Halogen Free
Polarity	NPN+PNP
Power Dissipation	0.385 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	35 @5mA, 10V
Input Power (Max)	250 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	385 mW
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

In contrast to traditional transistors, ON Semiconductor"s npn and PNP SMUN5311DW1T1G digital transistor"s can be used in a wide variety of digital signal processing circuits. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

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