SMUN5312DW1T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SMUN5312DW1T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW36459300
Category

BJT Transistor, BJT
Package

SC-70-6
Description

SC-88 NPN+PNP 50V 100mA
Documentation

Datasheet

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SMUN5312DW1T1G Specifications

Attribute	Attribute Value

Part Number	SMUN5312DW1T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW36459300
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Polarity	NPN+PNP
Power Dissipation	0.385 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	60 @5mA, 10V
Input Power (Max)	187 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	385 mW
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Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Thanks to ON Semiconductor, easily integrate npn and PNP SMUN5312DW1T1G digital transistors into digital signal processing circuits. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

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