SMUN5313DW1T1G - ON Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoSMUN5313DW1T1G
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ManufacturerON Semiconductor
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ChipWorker Part#CW41269481
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CategoryBJT Transistor, BJT
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PackageSOT-363-6
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DescriptionSOT-363 NPN+PNP 50V 100mA
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DocumentationDatasheet
Payment Methods and Delivery
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SMUN5313DW1T1G Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | SMUN5313DW1T1G |
| Manufacturer | ON Semiconductor |
| ChipWorker Part# | CW41269481 |
| Category | BJT Transistor, BJT |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-363-6 |
| Number of Channels | 2 Channel |
| Polarity | NPN+PNP |
| Power Dissipation | 0.385 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 80 @5mA, 10V |
| Input Power (Max) | 187 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 385 mW |
| expand all | |
| Operating Temperature | -55℃ ~ 150℃ |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| ECCN Code | EAR99 |
Product Description
- Apply the applications of a traditional bi polar junction transistor, in digital circuits with this npn and PNP SMUN5313DW1T1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
Delivery
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Ordering Information
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