SN65HVDA195QDRQ1 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SN65HVDA195QDRQ1
Manufacturer

TI
ChipWorker Part#

CW5699861
Category

LIN IC, Local Interconnect Network
Package

SOIC-8
Description

Automotive Catalog LIN, MOST ECL, and K-Line Physical Interface 8-SOIC -40℃ to 125℃
Documentation

Datasheet

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SN65HVDA195QDRQ1 Specifications

Attribute	Attribute Value

Part Number	SN65HVDA195QDRQ1
Manufacturer	TI
ChipWorker Part#	CW5699861
Category	LIN IC, Local Interconnect Network
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	7.00V (min)
Output Voltage	5.5 V
Output Current	3.5 mA
Number of Positions	8 Position
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	7V ~ 27V
Supply Voltage (Max)	27 V
Supply Voltage (Min)	7 V
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Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The SN65HVDA195QDRQ1 is a Local Interconnect Network (LIN) Physical Interface And MOST ECL Interface integrates the serial transceiver with wake-up and protection features. The bus is a single-wire bidirectional bus typically used for low-speed in-vehicle networks using data rates to 20kbps. The device can transmit with an effective data rate of 0kbps because it does not have dominant state time-out. The protocol output data stream on TXD is converted by the SN65HVDA195 into the bus signal through a current-limited wave-shaping driver as outlined by the LIN physical layer specification revision 2.0. The receiver converts the data stream from the bus and outputs the data stream through RXD. The bus has two states: dominant state (voltage near ground) and the recessive state (voltage near battery). In the recessive state, the bus is pulled high by the SN65HVDA195"s internal pull-up resistor and series diode, so no external pull-up components are required for slave applications.
Ultra low current consumption
High-speed receive capable
Wake-up request on RXD pin
Control of external voltage regulator (INH pin)
Integrated pull-up resistor and series diode for LIN slave applications
Low electromagnetic emission (EME) and high electromagnetic immunity (EMI)
Bus terminal short-circuit protected for short-to-battery or short-to-ground
Thermally protected
Ground disconnection failsafe at system level
Ground shift operation at system level
Unpowered node does not disturb the network
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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