SN65MLVD200AD - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SN65MLVD200AD
Manufacturer

TI
ChipWorker Part#

CW39840940
Category

Interface IC, Interface Controller
Package

SOIC-8
Description

Half-Duplex M-LVDS Transceiver 8-SOIC -40℃ to 85℃
Documentation

Datasheet

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SN65MLVD200AD Specifications

Attribute	Attribute Value

Part Number	SN65MLVD200AD
Manufacturer	TI
ChipWorker Part#	CW39840940
Category	Interface IC, Interface Controller
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	3.30 V
Supply Current	24 mA
Number of Positions	8 Position
Input Current	24.0 mA
Power Dissipation	94 W
Data Rate	100 Mbps
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	94 mW
Supply Voltage	3V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	3 V
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Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	5A991.b.1
HK STC License	NLR

Product Description

The SN65MLVD200AD is a half-duplex M-LVDS Transceiver optimized to operate at signalling rates up to 100Mbps. All parts comply with the multipoint low-voltage differential signalling (M-LVDS) standard TIA/EIA-899. The SN65MLVD20xx device have enhancements over their predecessors. Improved features include controlled slew rate on the driver output to help minimize reflections from unterminated stubs, which results in better signal integrity. Additionally, 8kV ESD protection on the bus pins for more robustness. The same footprint definition was maintained making for an easy drop-in replacement for a system performance upgrade. The device is characterized for catalogue operation.
Controlled driver output voltage transition times
Bus pin ESD protection exceeds 8kV
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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