SN74LVC1G125DBVR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SN74LVC1G125DBVR
Manufacturer

TI
ChipWorker Part#

CW16000
Category

Logic Controller, Logic IC
Package

SOT-23-5
Description

Buffer/Line Driver 1CH Non-Inverting 3-ST CMOS 5Pin SOT-23 T/R
Documentation

Datasheet

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SN74LVC1G125DBVR Specifications

Attribute	Attribute Value

Part Number	SN74LVC1G125DBVR
Manufacturer	TI
ChipWorker Part#	CW16000
Category	Logic Controller, Logic IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SOT-23-5
Supply Voltage (DC)	-500 mV to 6.50 V
Number of Outputs	1 Output
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	5 Position
Number of Bits	1 Bit
Propagation Delay Max (tpd)	4.00 ns
Number of Gates	1 Gate
Number of Inputs	1 Input
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	1.65V ~ 5.5V
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	1.65 V
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Size-Length	2.9 mm
Size-Width	1.6 mm
Size-Height	1.15 mm
Operating Temperature	-40℃ ~ 125℃ (TA)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

The SN74LVC1G125DBVR is a Bus Buffer Gate IC, designed for 1.65 to 5.5V VCC operation. This device is a single line driver with a 3-state output. The output is disabled when the output-enable (OE) input is high. The CMOS device has high output drive while maintaining low static power dissipation over a broad VCC operating range.
Supports 5V VCC Operation
Input Accepts Voltage to 5.5V
Provides Down Translation to VCC
3.7ns at 3.3V Maximum Propagation Delay Time
Low-power Consumption, 10µA Maximum ICC
±24mA Output Drive at 3.3V
Ioff Supports Live Insertion, Partial-power-down Mode and Back-drive Protection
Latch-up Performance Exceeds 100mA Per JESD 78, Class II
Green Product, No Sb/Br
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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