SN74LVC245ADWR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SN74LVC245ADWR
Manufacturer

TI
ChipWorker Part#

CW5984000
Category

Logic Controller, Logic IC
Package

SOIC-20
Description

TEXAS INSTRUMENTS SN74LVC245ADWR Transceiver, 74LVC245, 1.65V to 3.6V, SOIC-20
Documentation

Datasheet

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SN74LVC245ADWR Specifications

Attribute	Attribute Value

Part Number	SN74LVC245ADWR
Manufacturer	TI
ChipWorker Part#	CW5984000
Category	Logic Controller, Logic IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	20 Pin
Case/Package	SOIC-20
Supply Voltage (DC)	2.00V ~ 3.60V
Number of Outputs	8 Output
Number of Circuits	8 Circuit
Number of Channels	8 Channel
Number of Positions	20 Position
Number of Bits	8 Bit
Propagation Delay Max (tpd)	6.50 ns
Voltage Nodes	3.30 V, 2.70 V, 2.50 V, 1.80 V
Number of Gates	8 Gate
Output Current Drive	-1.00 mA
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	1.65V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	1.65 V
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Size-Length	12.8 mm
Size-Width	7.52 mm
Size-Height	2.35 mm
Operating Temperature	-40℃ ~ 125℃ (TA)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The SN74LVC245ADWR is an Octal Bus Transceiver IC, designed for 1.65 to 3.6V VCC operation. The device is designed for asynchronous communication between data buses.
Input Accepts Voltage to 5.5V
6.3ns at 3.3V Maximum Propagation Delay Time
<0.8V at VCC = 3.3V, TA = 25°C Typical VOLP (Output Ground Bounce)
>2V at VCC = 3.3V, TA = 25°C Typical VOHV (Output VOH Undershoot)
Ioff Supports Live Insertion, Partial-Power-down Mode and Back-drive protection
Supports Mixed-mode Signal Operation on All Ports (5V Input/Output Voltage with 3.3V VCC)
Latch-up Performance Exceeds 250mA per JESD 17
Green Product, No Sb/Br
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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