SPA11N80C3XKSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SPA11N80C3XKSA1
Manufacturer

Infineon
ChipWorker Part#

CW21260674
Category

High Voltage MOS Transistor
Package

TO-220-3
Description

TO-220FP N-CH 800V 11A
Documentation

Datasheet

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SPA11N80C3XKSA1 Specifications

Attribute	Attribute Value

Part Number	SPA11N80C3XKSA1
Manufacturer	Infineon
ChipWorker Part#	CW21260674
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	800 V
Current Rating	11.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.39 Ω
Polarity	N-Channel
Power Dissipation	41 W
Threshold Voltage	3 V
Input Capacitance	1600 pF
Drain to Source Voltage (Vds)	800 V
Continuous Drain Current (Ids)	11.0 A
Rise Time	15 ns
Maximum Forward Voltage (Max)	1.2 V
Input Capacitance (Ciss)	1600pF @100V(Vds)
Fall Time	7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	41 W
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Size-Length	10.65 mm
Size-Width	4.85 mm
Size-Height	9.83 mm
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The SPA11N80C3 is a 800V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
Very low energy storage in output capacitance (Eoss) at 400V
Low gate charge (Qg)
High efficiency and power density
Outstanding performance
High reliability
Easy to use

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