SPB80P06PGATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SPB80P06PGATMA1
Manufacturer

Infineon
ChipWorker Part#

CW2759118
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK P-CH 60V 80A
Documentation

Datasheet

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SPB80P06PGATMA1 Specifications

Attribute	Attribute Value

Part Number	SPB80P06PGATMA1
Manufacturer	Infineon
ChipWorker Part#	CW2759118
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	-60.0 V
Current Rating	-80.0 A
Power Rating	340 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.021 Ω
Polarity	P-Channel
Power Dissipation	340 W
Threshold Voltage	3 V
Input Capacitance	5.03 nF
Gate Charge	173 nC
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	80.0 A
Rise Time	18 ns
Input Capacitance (Ciss)	4026pF @25V(Vds)
Fall Time	30 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	340 W
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Size-Length	10.31 mm
Size-Width	9.45 mm
Size-Height	4.57 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The SPB80P06P G is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.
Enhancement mode
Avalanche rated
dv/dt Rated
AEC-Q101 qualified

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