SPD02N60S5 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SPD02N60S5
Manufacturer

Infineon
ChipWorker Part#

CW109774800
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 600V 1.8A
Documentation

Datasheet

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SPD02N60S5 Specifications

Attribute	Attribute Value

Part Number	SPD02N60S5
Manufacturer	Infineon
ChipWorker Part#	CW109774800
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	600 V
Current Rating	1.80 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	2.7 Ω
Polarity	N-Channel
Power Dissipation	25 W
Threshold Voltage	4.5 V
Input Capacitance	240 pF
Gate Charge	9.50 nC
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	1.80 A
Input Capacitance (Ciss)	240pF @25V(Vds)
Input Power (Max)	25 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25000 mW
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Size-Length	6.5 mm
Size-Width	6.22 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Obsolete
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The SPD02N60S5 is a 600V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for general purpose applications.
New revolutionary high voltage technology
Extreme dV/dt rated
Ultra low effective capacitance
Qualified according to JEDEC for target applications
Improved transconductance
Innovative high voltage technology
Worldwide best RDS (ON)
Periodic avalanche rated

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