SPD06N80C3ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SPD06N80C3ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW18946440
Category

High Voltage MOS Transistor
Package

TO-252-3
Description

DPAK N-CH 800V 6A
Documentation

Datasheet

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SPD06N80C3ATMA1 Specifications

Attribute	Attribute Value

Part Number	SPD06N80C3ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW18946440
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.78 Ω
Polarity	N-Channel
Power Dissipation	83 W
Threshold Voltage	3 V
Input Capacitance	785 pF
Drain to Source Voltage (Vds)	800 V
Continuous Drain Current (Ids)	6A
Rise Time	15 ns
Input Capacitance (Ciss)	785pF @100V(Vds)
Input Power (Max)	83 W
Fall Time	8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	83W (Tc)
	expand all
Size-Length	6.5 mm
Size-Width	6.22 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

Summary of Features:
Low specific on-state resistance
(R on*A)
Very low energy storage in output capacitance (E oss) @400V
Low gate charge (Q g)
Fieldproven CoolMOS™ quality
CoolMOS™ technology has been manufactured by Infineon since 1998
Benefits:
High efficiency and power density
Outstanding cost/performance
High reliability
Ease-of-use
Target Applications:
Consumer
PC power
Adapter
Lighting
Solar

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