SPD08P06PGBTMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SPD08P06PGBTMA1
Manufacturer

Infineon
ChipWorker Part#

CW20097344
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK P-CH 60V 8.83A
Documentation

Datasheet

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SPD08P06PGBTMA1 Specifications

Attribute	Attribute Value

Part Number	SPD08P06PGBTMA1
Manufacturer	Infineon
ChipWorker Part#	CW20097344
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	42 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.23 Ω
Polarity	P-Channel
Power Dissipation	42 W
Threshold Voltage	3 V
Input Capacitance	335 pF
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	8.83A
Rise Time	46 ns
Input Capacitance (Ciss)	420pF @25V(Vds)
Input Power (Max)	42 W
Fall Time	14 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	42W (Tc)
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Size-Length	6.5 mm
Size-Width	6.22 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The SPD08P06P G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
Enhancement-mode
Avalanche rated
Small signal packages approved to AEC Q101
dV/dt Rated
Qualified according to AEC-Q101
Green device

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