SPD18P06PGBTMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SPD18P06PGBTMA1
Manufacturer

Infineon
ChipWorker Part#

CW13697427
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK P-CH 60V 18.6A
Documentation

Datasheet

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SPD18P06PGBTMA1 Specifications

Attribute	Attribute Value

Part Number	SPD18P06PGBTMA1
Manufacturer	Infineon
ChipWorker Part#	CW13697427
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	80 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.1 Ω
Polarity	P-Channel
Power Dissipation	80 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	18.6A
Rise Time	5.8 ns
Input Capacitance (Ciss)	690pF @25V(Vds)
Fall Time	11 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	80 W
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.41 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The SPD18P06P G is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.
Enhancement mode
Avalanche rated
dv/dt Rated
AEC-Q101 qualified

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