SPP80P06PHXKSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SPP80P06PHXKSA1
Manufacturer

Infineon
ChipWorker Part#

CW6873830
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220P-CH 60V 80A
Documentation

Datasheet

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SPP80P06PHXKSA1 Specifications

Attribute	Attribute Value

Part Number	SPP80P06PHXKSA1
Manufacturer	Infineon
ChipWorker Part#	CW6873830
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	340 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.021 Ω
Polarity	P-Channel
Power Dissipation	340 W
Threshold Voltage	3 V
Input Capacitance	4026 pF
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	80A
Rise Time	18 ns
Input Capacitance (Ciss)	4026pF @25V(Vds)
Fall Time	30 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	340 W
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Size-Length	10 mm
Size-Width	4.4 mm
Size-Height	15.95 mm
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The SPP80P06P H is a SIPMOS® P-channel enhancement mode Power Transistor. This transistor consistently meets the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
±20V Gate-source voltage
Avalanche rated
Halogen-free

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