SS8050DBU - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SS8050DBU
Manufacturer

ON Semiconductor
ChipWorker Part#

CW37557845
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

SS8050 Series NPN 1W 25V 1.5A Through Hole Epitaxial Transistor - TO-92
Documentation

Datasheet

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SS8050DBU Specifications

Attribute	Attribute Value

Part Number	SS8050DBU
Manufacturer	ON Semiconductor
ChipWorker Part#	CW37557845
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-226-3
Frequency	100 MHz
Number of Positions	3 Position
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	25 V
hFE Min	160 @100mA, 1V
Input Power (Max)	1 W
DC Current Gain (hFE)	160
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	4.58 mm
Size-Width	3.86 mm
Size-Height	4.58 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bag
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The SS8050DBU is a NPN Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation.
Complimentary to SS8550

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