SSM2212 - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SSM2212
Manufacturer

ADI
ChipWorker Part#

CW760454303
RoHS

Lead free / RoHS Compliant
Description

Audio Dual Matched NPN Transistor
Documentation

Datasheet

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SSM2212 Specifications

Attribute	Attribute Value

Part Number	SSM2212
Manufacturer	ADI
ChipWorker Part#	CW760454303
Documentation	Datasheet
Case/Package	SOIC
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Product Lifecycle Status	Active
RoHS	RoHS Compliant

Product Description

GENERAL DESCRIPTION
The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems.
With its extremely low input base spreading resistance (rbb" is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the SSM2212 can achieve outstanding signal-to noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.
Excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS of less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion.
Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction.
The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because a current mirror’s accuracy degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications.
The SSM2212 performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C.
FEATURES
Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz
Excellent current gain match: 0.5%
Low offset voltage (VOS): 200 μV maximum
Outstanding offset voltage drift: 0.03 μV/°C
High gain bandwidth product: 200 MHz

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