STB100NF04T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB100NF04T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW12884333
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 40V 120A
Documentation

Datasheet

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STB100NF04T4 Specifications

Attribute	Attribute Value

Part Number	STB100NF04T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW12884333
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0043 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	40 V
Breakdown Voltage (Drain to Source)	40.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	120 A
Rise Time	220 ns
Input Capacitance (Ciss)	5100pF @25V(Vds)
Input Power (Max)	300 W
Fall Time	50 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW
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Size-Length	10.4 mm
Size-Width	9.35 mm
Size-Height	4.6 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STB100NF04T4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique STripFET process. It is specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DC-to-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
Standard threshold drive
100% Avalanche tested
-55 to 175°C Operating junction temperature range

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