STB11NM60T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB11NM60T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW21789463
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

Power MOSFET, N Channel, 5.5A, 650V, 400mohm, 10V, 4V
Documentation

Datasheet

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STB11NM60T4 Specifications

Attribute	Attribute Value

Part Number	STB11NM60T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW21789463
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	600 V
Current Rating	11.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.4 Ω
Polarity	N-Channel
Power Dissipation	160 W
Threshold Voltage	4 V
Input Capacitance	1000 pF
Drain to Source Voltage (Vds)	650 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	11.0 A
Rise Time	20 ns
Maximum Forward Voltage (Max)	1.5 V
Input Capacitance (Ciss)	1000pF @25V(Vds)
Input Power (Max)	160 W
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	160W (Tc)
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Size-Length	10.4 mm
Size-Width	10.4 mm
Size-Height	4.6 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
General features
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching application

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