STB13007DT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB13007DT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW21382033
Category

BJT Transistor, BJT
Package

TO-263-3
Description

D2PAK NPN 400V 8A
Documentation

Datasheet

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STB13007DT4 Specifications

Attribute	Attribute Value

Part Number	STB13007DT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW21382033
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	400 V
Current Rating	8.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	80 W
Breakdown Voltage (Collector to Emitter)	400 V
Continuous Collector Current	8A
hFE Min	8 @5A, 5V
Input Power (Max)	80 W
DC Current Gain (hFE)	18
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	80000 mW
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Size-Length	10.4 mm
Size-Width	9.35 mm
Size-Height	4.6 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16
ECCN Code	EAR99

Product Description

The STB13007DT4 is a NPN fast-switching Power Transistor manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure to enhance switching speeds. Improved specification offers lower leakage current, tighter gain range, DC current gain pre-selection and tighter storage time range.
Integrated free-wheeling diode
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Large RBSOA
In compliance with the 2002/93/EC European directive

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