STB13N80K5 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB13N80K5
Manufacturer

ST Microelectronics
ChipWorker Part#

CW13511030
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 800V 12A
Documentation

Datasheet

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STB13N80K5 Specifications

Attribute	Attribute Value

Part Number	STB13N80K5
Manufacturer	ST Microelectronics
ChipWorker Part#	CW13511030
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.37 Ω
Polarity	N-CH
Power Dissipation	19 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	800 V
Continuous Drain Current (Ids)	12A
Rise Time	16 ns
Input Capacitance (Ciss)	870pF @100V(Vds)
Fall Time	16 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	190W (Tc)
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Size-Length	10.4 mm
Size-Width	9.35 mm
Size-Height	4.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This STB13N80K5 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 19000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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