STB18NM80 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB18NM80
Manufacturer

ST Microelectronics
ChipWorker Part#

CW24730326
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 800V 17A
Documentation

Datasheet

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STB18NM80 Specifications

Attribute	Attribute Value

Part Number	STB18NM80
Manufacturer	ST Microelectronics
ChipWorker Part#	CW24730326
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.25 Ω
Polarity	N-Channel
Power Dissipation	190 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	800 V
Continuous Drain Current (Ids)	17A
Rise Time	28 ns
Maximum Forward Voltage (Max)	1.6 V
Input Capacitance (Ciss)	2070pF @50V(Vds)
Input Power (Max)	190 W
Fall Time	50 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	190W (Tc)
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Size-Length	10.75 mm
Size-Width	10.4 mm
Size-Height	4.6 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STB18NM80 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using STMicroelectronics" revolutionary MDmesh™ technology, which associates the multiple drain process with the company"s PowerMESH™ horizontal layout. This device offers extremely low ON-resistance, high dV/dt and excellent avalanche characteristics. Utilizing ST"s proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
100% Avalanche tested
Low gate input resistance

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