STB19NF20 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB19NF20
Manufacturer

ST Microelectronics
ChipWorker Part#

CW13263662
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

N-channel 200V - 0.15Ω- 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY™ Power MOSFET
Documentation

Datasheet

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STB19NF20 Specifications

Attribute	Attribute Value

Part Number	STB19NF20
Manufacturer	ST Microelectronics
ChipWorker Part#	CW13263662
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Channels	1 Channel
Power Dissipation	90 W
Drain to Source Voltage (Vds)	200 V
Rise Time	22 ns
Input Capacitance (Ciss)	800pF @25V(Vds)
Input Power (Max)	90 W
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	90W (Tc)
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Size-Length	10.75 mm
Size-Width	10.4 mm
Size-Height	4.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Description
This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with
standard parts from various sources.
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances

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