STB23NM60ND - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB23NM60ND
Manufacturer

ST Microelectronics
ChipWorker Part#

CW25686397
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 600V 19.5A
Documentation

Datasheet

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STB23NM60ND Specifications

Attribute	Attribute Value

Part Number	STB23NM60ND
Manufacturer	ST Microelectronics
ChipWorker Part#	CW25686397
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.15 Ω
Polarity	N-Channel
Power Dissipation	150 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	10.0 A
Rise Time	19 ns
Input Capacitance (Ciss)	2050pF @50V(Vds)
Input Power (Max)	150 W
Fall Time	42 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150W (Tc)
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Size-Length	10.75 mm
Size-Width	10.4 mm
Size-Height	4.6 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STB23NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
The worldwide best RDS (ON) area amongst the fast recovery diode device
100% Avalanche tested
Low gate input resistance
High dV/dt and avalanche capabilities

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