STB4NK60ZT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB4NK60ZT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW12644596
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 600V 4A
Documentation

Datasheet

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STB4NK60ZT4 Specifications

Attribute	Attribute Value

Part Number	STB4NK60ZT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW12644596
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	600 V
Current Rating	4.00 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.76 Ω
Polarity	N-Channel
Power Dissipation	70 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	2.00 A
Rise Time	9.5 ns
Input Capacitance (Ciss)	510pF @25V(Vds)
Input Power (Max)	70 W
Fall Time	16.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	70000 mW
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Size-Length	10.4 mm
Size-Width	9.35 mm
Size-Height	4.6 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STB4NK60ZT4 is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, the MOSFET is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% Avalanche tested
Very low intrinsic capacitance
Zener-protected

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