STB55NF06LT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB55NF06LT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW25141461
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 60V 55A
Documentation

Datasheet

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STB55NF06LT4 Specifications

Attribute	Attribute Value

Part Number	STB55NF06LT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW25141461
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	60.0 V
Current Rating	55.0 A
Power Rating	95 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.014 Ω
Polarity	N-Channel
Power Dissipation	95 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±16.0 V
Continuous Drain Current (Ids)	220 A
Rise Time	100 ns
Input Capacitance (Ciss)	1700pF @25V(Vds)
Input Power (Max)	95 W
Fall Time	20 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	95W (Tc)
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Size-Length	10.75 mm
Size-Width	10.4 mm
Size-Height	4.6 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

The STB55NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Exceptional dV/dt capability
100% Avalanche tested
Application oriented characterization
-55 to 175°C Operating junction temperature

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