STB6NK60ZT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB6NK60ZT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW10769596
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 600V 6A
Documentation

Datasheet

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STB6NK60ZT4 Specifications

Attribute	Attribute Value

Part Number	STB6NK60ZT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW10769596
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	600 V
Current Rating	6.00 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1 Ω
Polarity	N-Channel
Power Dissipation	110 W
Threshold Voltage	3.75 V
Input Capacitance	905 pF
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	6.00 A
Rise Time	14 ns
Input Capacitance (Ciss)	905pF @25V(Vds)
Input Power (Max)	110 W
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	10.75 mm
Size-Width	10.4 mm
Size-Height	4.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STB6NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
100% Avalanche tested
Extremely high dV/dt capability

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