STB9NK60ZT4 - ST Microelectronics
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoSTB9NK60ZT4
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ManufacturerST Microelectronics
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ChipWorker Part#CW10239922
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CategoryMOSFET, MOSFET Transistor
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PackageTO-263-3
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DescriptionPower MOSFET, N Channel, 3.5A, 600V, 850mohm, 10V, 3.75V
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DocumentationDatasheet
Payment Methods and Delivery
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STB9NK60ZT4 Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | STB9NK60ZT4 |
| Manufacturer | ST Microelectronics |
| ChipWorker Part# | CW10239922 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Voltage Rating (DC) | 600 V |
| Current Rating | 7.00 A |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.85 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 7.00 A |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 1110pF @25V(Vds) |
| Input Power (Max) | 125 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125W (Tc) |
| expand all | |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- The STB9NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics" SuperMESH™ technology, achieved through optimization of ST"s well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- Improved ESD capability
- 100% Avalanche tested
- Very low intrinsic capacitance
- Extremely high dV/dt capability
Delivery
Chipworker Certification
Ordering Information
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- The tracking number will be sent to you after the order is shipped. (It may take up to 24 hours for the information to be available from the carrier.) View more > - - Carefully tested and packaged by ChipWorker- Vacuum packed - Anti-static packaging - Anti-vibration foam
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