STD10NM60ND - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD10NM60ND
Manufacturer

ST Microelectronics
ChipWorker Part#

CW24866882
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

STMICROELECTRONICS STD10NM60ND Power MOSFET, N Channel, 8A, 600V, 0.57Ω, 10V, 4V
Documentation

Datasheet

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STD10NM60ND Specifications

Attribute	Attribute Value

Part Number	STD10NM60ND
Manufacturer	ST Microelectronics
ChipWorker Part#	CW24866882
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.57 Ω
Polarity	N-Channel
Power Dissipation	70 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Rise Time	10 ns
Input Capacitance (Ciss)	577pF @50V(Vds)
Input Power (Max)	70 W
Fall Time	9.8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	70W (Tc)
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STD10NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
100% Avalanche tested
Low gate input resistance
Extremely high dV/dt avalanche capabilities

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