STD10PF06T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD10PF06T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW13329212
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK P-CH 60V 10A
Documentation

Datasheet

STD10PF06T4 Global Supplier

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STD10PF06T4 Specifications

Attribute	Attribute Value

Part Number	STD10PF06T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW13329212
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	-60.0 V
Current Rating	-10.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.18 Ω
Polarity	P-Channel
Power Dissipation	40 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	10.0 A
Rise Time	40 ns
Input Capacitance (Ciss)	850pF @25V(Vds)
Input Power (Max)	40 W
Fall Time	10 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	40W (Tc)
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STD10PF06T4 is a STripFET™ II P-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
0.18R RDS (ON)
Exceptional dV/dt capability
100% Avalanche tested
Low gate charge
Application oriented characterization
Surface-mount power package

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