STD12NF06T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD12NF06T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8955266
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 60V 12A
Documentation

Datasheet

STD12NF06T4 Global Supplier

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STD12NF06T4 Specifications

Attribute	Attribute Value

Part Number	STD12NF06T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8955266
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	60.0 V
Current Rating	12.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	80 mΩ
Polarity	N-Channel
Power Dissipation	30 W
Threshold Voltage	3 V
Input Capacitance	315 pF
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	12.0 A
Rise Time	18 ns
Input Capacitance (Ciss)	315pF @25V(Vds)
Input Power (Max)	30 W
Fall Time	6 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	30W (Tc)
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STD12NF06T4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Exceptional dV/dt capability
Low gate charge
-55 to 175°C Operating junction temperature range

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