STD4NK60ZT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD4NK60ZT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW2652707
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

N-CHANNEL 600V - 1.76Ω - 4A TO-220/TO-220FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
Documentation

Datasheet

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STD4NK60ZT4 Specifications

Attribute	Attribute Value

Part Number	STD4NK60ZT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW2652707
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	600 V
Current Rating	4.00 A
Power Rating	70 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	2 Ω
Polarity	N-Channel
Power Dissipation	70 W
Threshold Voltage	2.3 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	4.00 A
Rise Time	9.5 ns
Input Capacitance (Ciss)	510pF @25V(Vds)
Input Power (Max)	70 W
Fall Time	16.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	70000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The STD4NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection. This Power MOSFET developed using STMicroelectronics" SuperMESH™ technology, achieved through optimization of ST"s well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
Very low intrinsic capacitance

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