STD5NK50ZT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD5NK50ZT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW9304345
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 500V 4.4A
Documentation

Datasheet

STD5NK50ZT4 Global Supplier

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STD5NK50ZT4 Specifications

Attribute	Attribute Value

Part Number	STD5NK50ZT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW9304345
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	500 V
Current Rating	4.40 A
Power Rating	70 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.5 Ω
Polarity	N-Channel
Power Dissipation	70 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	4.40 A
Rise Time	10 ns
Input Capacitance (Ciss)	535pF @25V(Vds)
Input Power (Max)	70 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	70W (Tc)
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STD5NK50ZT4 is a SuperMESH™ N-channel Zener-protected MOSFET obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. The series complements full range of high voltage MOSFETs including revolutionary MDmesh™ products.
1.22R RDS (ON)
Extremely high dV/dt capability
Improved ESD capability
100% Avalanche rated
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability

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