STD60N55F3 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD60N55F3
Manufacturer

ST Microelectronics
ChipWorker Part#

CW26036321
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 55V 80A
Documentation

Datasheet

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STD60N55F3 Specifications

Attribute	Attribute Value

Part Number	STD60N55F3
Manufacturer	ST Microelectronics
ChipWorker Part#	CW26036321
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Polarity	N-CH
Power Dissipation	110 W
Input Capacitance	2200 pF
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	80A
Rise Time	50 ns
Input Capacitance (Ciss)	2200pF @25V(Vds)
Input Power (Max)	110 W
Fall Time	11.5 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Increase the current or voltage in your circuit with this STD60N55F3 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet iii technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

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