STD60NF06T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD60NF06T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW10215763
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 60V 60A
Documentation

Datasheet

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STD60NF06T4 Specifications

Attribute	Attribute Value

Part Number	STD60NF06T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW10215763
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.014 Ω
Polarity	N-Channel
Power Dissipation	110 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	60.0 A
Rise Time	108 ns
Input Capacitance (Ciss)	1810pF @25V(Vds)
Input Power (Max)	110 W
Fall Time	20 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Description
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
■ Exceptional dv/dt capability
■ Application oriented characterization
■ 100% avalanche tested
Applications
■ Switching application

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