STD6NF10T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD6NF10T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW10220800
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

N-CHANNEL 100V - 0.22Ω - 6A IPAK/DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
Documentation

Datasheet

STD6NF10T4 Global Supplier

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STD6NF10T4 Specifications

Attribute	Attribute Value

Part Number	STD6NF10T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW10220800
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	100 V
Current Rating	6.00 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.22 Ω
Polarity	N-Channel
Power Dissipation	30 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	3.00 A
Rise Time	10 ns
Input Capacitance (Ciss)	280pF @25V(Vds)
Input Power (Max)	30 W
Fall Time	3 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	30W (Tc)
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-65℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STD6NF10T4 is a STripFET™ N-channel Power MOSFET designed to minimize input capacitance and gate charge. It is suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-to-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
Exceptional dV/dt capability
100% Avalanche tested
-65 to 175°C Operating junction temperature range

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