STD888T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD888T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW25200314
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK PNP 30V 5A
Documentation

Datasheet

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STD888T4 Specifications

Attribute	Attribute Value

Part Number	STD888T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW25200314
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	15 W
Rise Time	160 ns
Breakdown Voltage (Collector to Emitter)	30 V
Continuous Collector Current	5A
hFE Min	100 @500mA, 1V
Input Power (Max)	15 W
DC Current Gain (hFE)	200
Fall Time	80 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	15000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STD888T4 is a PNP Low Voltage Transistor with medium current and high performance. It is manufactured in Planar technology by using a "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Very low collector to emitter saturation voltage
Surface-mount power package
In compliance with the 2002/93/EC European directive

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