STD9N60M2 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD9N60M2
Manufacturer

ST Microelectronics
ChipWorker Part#

CW26911782
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 600V 5.5A
Documentation

Datasheet

STD9N60M2 Global Supplier

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STD9N60M2 Specifications

Attribute	Attribute Value

Part Number	STD9N60M2
Manufacturer	ST Microelectronics
ChipWorker Part#	CW26911782
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Polarity	N-CH
Power Dissipation	60 W
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	5.5A
Rise Time	7.5 ns
Input Capacitance (Ciss)	320pF @100V(Vds)
Input Power (Max)	60 W
Fall Time	13.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60W (Tc)
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Looking for a component that can both amplify and switch between signals within your circuit? The STD9N60M2 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 60000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.

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