STE70NM60 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STE70NM60
Manufacturer

ST Microelectronics
ChipWorker Part#

CW86321916
Category

MOSFET, MOSFET Transistor
Package

ISOTOP-4
Description

STMICROELECTRONICS STE70NM60 Power MOSFET, N Channel, 30A, 600V, 50mohm, 10V, 4V
Documentation

Datasheet

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STE70NM60 Specifications

Attribute	Attribute Value

Part Number	STE70NM60
Manufacturer	ST Microelectronics
ChipWorker Part#	CW86321916
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	ISOTOP-4
Voltage Rating (DC)	600 V
Current Rating	70.0 A
Number of Channels	1 Channel
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	50 mΩ
Polarity	N-Channel
Power Dissipation	600 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	70.0 A
Rise Time	95 ns
Input Capacitance (Ciss)	7300pF @25V(Vds)
Input Power (Max)	600 W
Fall Time	76 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	600W (Tc)
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Size-Width	25.5 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STE70NM60 is a MDmesh™ N-channel Power MOSFET offers Zener-protection and low gate charge. The MDmesh™ is a new revolutionary MOSFET technology that associates the multiple drain process with the Company"s PowerMESH™ horizontal layout. The resulting product has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The adoption of the Company"s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition"s products. The MDmesh™ is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Improved ESD capability
Low gate input resistance
Industry"s lowest ON-resistance
Low input capacitance

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