STF10N65K3 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STF10N65K3
Manufacturer

ST Microelectronics
ChipWorker Part#

CW21779763
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220FP N-CH 650V 10A
Documentation

Datasheet

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STF10N65K3 Specifications

Attribute	Attribute Value

Part Number	STF10N65K3
Manufacturer	ST Microelectronics
ChipWorker Part#	CW21779763
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1 Ω
Polarity	N-Channel
Power Dissipation	35 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	10A
Rise Time	14 ns
Input Capacitance (Ciss)	1180pF @25V(Vds)
Input Power (Max)	35 W
Fall Time	35 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	35W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STF10N65K3 is a SuperMESH3™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics" SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low ON-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Extremely high dV/dt capability
Very low intrinsic capacitance
Improved diode reverse recovery characteristics

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