STF10NK50Z - ST Microelectronics
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoSTF10NK50Z
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ManufacturerST Microelectronics
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ChipWorker Part#CW43573069
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CategoryMOSFET, MOSFET Transistor
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PackageTO-220-3
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DescriptionTrans MOSFET N-CH 500V 9A 3Pin(3+Tab) TO-220FP Tube
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DocumentationDatasheet
Payment Methods and Delivery
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STF10NK50Z Global Supplier
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STF10NK50Z Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | STF10NK50Z |
| Manufacturer | ST Microelectronics |
| ChipWorker Part# | CW43573069 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Voltage Rating (DC) | 500 V |
| Current Rating | 9.00 A |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 550 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 30 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 4.50 A |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 1219pF @25V(Vds) |
| Input Power (Max) | 30 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 30W (Tc) |
| expand all | |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- DESCRIPTION
- The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS FETs including revolutionary MDmesh™ products.
- ■ TYPICAL RDS(on) = 0.55 Ω
- ■ EXTREMELY HIGH dv/dt CAPABILITY
- ■ 100% AVALANCHE TESTED
- ■ GATE CHARGE MINIMIZED
- ■ VERY LOW INTRINSIC CAPACITANCES
- ■ VERY GOOD MANUFACTURING REPEATIBILITY
- APPLICATIONS
- ■ HIGH CURRENT, HIGH SPEED SWITCHING
- ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
- ■ LIGHTING
Delivery
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Ordering Information
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These terms and conditions are for reference only. The actual terms and conditions are subject to the sales staff's quotation.
- Please check the technical specifications of the products when ordering.
- MOQ is the minimum order quantity required to purchase each part.
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- All prices on the website include 20% VAT.
- Invoices are issued in the currency specified, but payment is made in Russian rubles at the exchange rate on the day of payment.
- If you need a detailed invoice or a tax identifier, please contact us. -
- Delivery will take between 1 to 2 weeks after the shipment is sent to your country.
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- The tracking number will be sent to you after the order is shipped. (It may take up to 24 hours for the information to be available from the carrier.) View more > - - Carefully tested and packaged by ChipWorker- Vacuum packed - Anti-static packaging - Anti-vibration foam
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