STF10NM60N - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STF10NM60N
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8766786
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-channel 600V, 0.53Ω, 10A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET
Documentation

Datasheet

STF10NM60N Global Supplier

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STF10NM60N Specifications

Attribute	Attribute Value

Part Number	STF10NM60N
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8766786
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.53 Ω
Polarity	N-Channel
Power Dissipation	25 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	600 V
Rise Time	12 ns
Input Capacitance (Ciss)	540pF @50V(Vds)
Input Power (Max)	25 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	16.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STF10NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET is developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
100% Avalanche tested
Low gate input resistance

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