STF11NM50N - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STF11NM50N
Manufacturer

ST Microelectronics
ChipWorker Part#

CW19890088
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220FP N-CH 500V 8.5A
Documentation

Datasheet

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STF11NM50N Specifications

Attribute	Attribute Value

Part Number	STF11NM50N
Manufacturer	ST Microelectronics
ChipWorker Part#	CW19890088
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.4 Ω
Polarity	N-Channel
Power Dissipation	25 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	8.5A
Rise Time	10 ns
Input Capacitance (Ciss)	547pF @50V(Vds)
Input Power (Max)	25 W
Fall Time	10 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25W (Tc)
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STF11NM50N is a MDmesh™ II N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure strip layout to yields lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistance

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