STF11NM80 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STF11NM80
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8404340
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220FP N-CH 800V 11A
Documentation

Datasheet

STF11NM80 Global Supplier

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STF11NM80 Specifications

Attribute	Attribute Value

Part Number	STF11NM80
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8404340
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	800 V
Current Rating	11.0 A
Power Rating	35 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.35 Ω
Polarity	N-Channel
Power Dissipation	35 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	11.0 A
Rise Time	17 ns
Input Capacitance (Ciss)	1630pF @25V(Vds)
Input Power (Max)	35 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	35W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.3 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
HK STC License	NLR

Product Description

The STF11NM80 is a 800V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior.
Low input capacitance and gate charge
Low gate input resistance
Best RDS (on)
High peak power
High ruggedness capability

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