STGB14NC60KDT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGB14NC60KDT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW5071104
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

Trans IGBT Chip N-CH 600V 25A 80000mW 3Pin(2+Tab) D2PAK T/R
Documentation

Datasheet

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STGB14NC60KDT4 Specifications

Attribute	Attribute Value

Part Number	STGB14NC60KDT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW5071104
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	600 V
Current Rating	25.0 A
Polarity	N-Channel
Power Dissipation	80000 mW
Input Capacitance	760 pF
Rise Time	8.50 ns
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	62.5 ℃/W
Reverse recovery time	37 ns
Input Power (Max)	80 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	80000 mW
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Size-Width	9.35 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

You won"t need to worry about any lagging in your circuit with this STGB14NC60KDT4 IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 80000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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