STGB18N40LZT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGB18N40LZT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW16048907
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

STMICROELECTRONICS STGB18N40LZT4 IGBT Single Transistor, 30A, 1.35V, 150W, 390V, TO-263, 3Pins
Documentation

Datasheet

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STGB18N40LZT4 Specifications

Attribute	Attribute Value

Part Number	STGB18N40LZT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW16048907
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Power Dissipation	150 W
Input Capacitance	490 pF
Breakdown Voltage (Collector to Emitter)	420 V
Thermal Resistance	62.5 ℃/W
Input Power (Max)	150 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 W
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Size-Length	10.4 mm
Size-Width	9.35 mm
Size-Height	4.6 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STGB18N40LZT4 is an internally clamped IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diode between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low ON-state voltage drop and low threshold drive for use in automotive ignition system. It is suitable for pencil coil electronic ignition drive.
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
180mJ Avalanche energy @ TC = 150°C, L = 3mH

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