STGB19NC60KDT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGB19NC60KDT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW11727485
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

Trans IGBT Chip N-CH 600V 35A 125000mW 3Pin(2+Tab) D2PAK T/R
Documentation

Datasheet

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STGB19NC60KDT4 Specifications

Attribute	Attribute Value

Part Number	STGB19NC60KDT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW11727485
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Dissipation	125000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	31 ns
Input Power (Max)	125 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	125000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Use the STGB19NC60KDT4 IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 125000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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