STGB20NC60V - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGB20NC60V
Manufacturer

ST Microelectronics
ChipWorker Part#

CW37176800
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(2+Tab) D2PAK T/R
Documentation

Datasheet

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STGB20NC60V Specifications

Attribute	Attribute Value

Part Number	STGB20NC60V
Manufacturer	ST Microelectronics
ChipWorker Part#	CW37176800
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This STGB20NC60V IGBT transistor from STMicroelectronics will work perfectly in your circuit. Its maximum power dissipation is 200000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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