STGB30V60DF - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGB30V60DF
Manufacturer

ST Microelectronics
ChipWorker Part#

CW56169040
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

Trans IGBT Chip N-CH 600V 60A 3Pin D2PAK T/R
Documentation

Datasheet

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STGB30V60DF Specifications

Attribute	Attribute Value

Part Number	STGB30V60DF
Manufacturer	ST Microelectronics
ChipWorker Part#	CW56169040
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	53 ns
Input Power (Max)	258 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The STGB30V60DF IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.

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